IRFR5305TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Mounting Type :

Surface Mount

Power Dissipation-Max :

110W Tc

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.065Ohm

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Published :

2000

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

280 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

110A

JEDEC-95 Code :

TO-252AA

Drain Current-Max (Abs) (ID) :

31A

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Single

Number of Terminations :

2