IRFR48ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Case Connection :

DRAIN

Power Dissipation :

91W

Terminal Form :

Gull wing

Fall Time (Typ) :

35 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Element Configuration :

Single

Drain to Source Breakdown Voltage :

55V

Published :

2010

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Series :

HEXFET®

Number of Pins :

3

Rise Time :

61ns

Continuous Drain Current (ID) :

42A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Terminations :

2

Transistor Application :

SWITCHING

Mount :

Surface Mount

Width :

6.73mm

Length :

10.3886mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation-Max :

91W Tc

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 50μA

Rds On (Max) @ Id, Vgs :

11m Ω @ 37A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Turn-Off Delay Time :

40 ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Height :

2.3876mm

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

74 mJ

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

250A