IRFR48ZPBF
- Mfr.Part #
- IRFR48ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 42A DPAK
- Stock
- 120,111
- In Stock :
- 120,111
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2004
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 42A
- Resistance :
- 11mOhm
- Drain to Source Breakdown Voltage :
- 55V
- Lead Free :
- Lead Free
- Rise Time :
- 61ns
- Current Rating :
- 62A
- Packaging :
- Tube
- Turn-Off Delay Time :
- 40 ns
- Operating Temperature :
- -55°C~175°C TJ
- Termination :
- SMD/SMT
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Factory Lead Time :
- 15 Weeks
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 37A, 10V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 35 ns
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 55V
- Recovery Time :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- FET Type :
- N-Channel
- Length :
- 10.3886mm
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1720pF @ 25V
- Height :
- 2.3876mm
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- Number of Pins :
- 3
- Power Dissipation :
- 91W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- 55V
- Nominal Vgs :
- 4 V
- Width :
- 6.73mm
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 91W Tc
- Datasheets
- IRFR48ZPBF

N-Channel Tube 11m Ω @ 37A, 10V ±20V 1720pF @ 25V 60nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR48ZPBF Description
The IRFR48ZPBF is a single channel HEXFET? Power MOSFET that provides extremely low on-resistance per silicon area thanks to its use of the most advanced processing techniques. Additionally, this design features an operating junction temperature of 175°C, rapid switching speeds, and improved repetitive avalanche ratings. Featuring a variety of features, this device is extremely efficient and reliable for a wide variety of applications.
IRFR48ZPBF Features
-
Advanced process technology
-
Ultra-low on-resistance
-
Repetitive avalanche allowed up to Tjmax
-
175°C Operating temperature
-
Capable of being wave-soldered
-
Optimized for broadest availability from distribution partners
-
Product qualification according to JEDEC standard
-
Normal level: Optimized for 10 V gate drive voltage
-
Industry-standard surface-mount power package
IRFR48ZPBF Applications
-
Power Management
-
Audio
-
Industrial
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