IRFR4620TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

25.4 ns

Turn On Delay Time :

13.4 ns

Transistor Application :

SWITCHING

Rise Time :

22.4ns

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Power Dissipation :

144W

Height :

2.52mm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Fall Time (Typ) :

14.8 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Resistance :

78mOhm

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

78m Ω @ 15A, 10V

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Element Configuration :

Single

FET Type :

N-Channel

Published :

2009

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

175°C

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Power Dissipation-Max :

144W Tc

Width :

6.73mm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Channels :

1

Mount :

Surface Mount

Series :

HEXFET®

Continuous Drain Current (ID) :

24A

Length :

10.3886mm

Vgs(th) (Max) @ Id :

5V @ 100µA