IRFR4620PBF
- Mfr.Part #
- IRFR4620PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 24A D-PAK
- Stock
- 22,112
- In Stock :
- 22,112
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 5 V
- Height :
- 2.3876mm
- Resistance :
- 78mOhm
- Mount :
- Surface Mount
- Packaging :
- Tube
- Power Dissipation-Max :
- 144W Tc
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 50V
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 24A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Power Dissipation :
- 144W
- Length :
- 6.73mm
- Factory Lead Time :
- 19 Weeks
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 15A, 10V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Published :
- 2009
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Element Configuration :
- Single
- Turn On Delay Time :
- 13.4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 22.4ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 25.4 ns
- Fall Time (Typ) :
- 14.8 ns
- Drain to Source Breakdown Voltage :
- 200V
- Dual Supply Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Datasheets
- IRFR4620PBF

N-Channel Tube 78m Ω @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR4620PBF Description
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques when application note AN-1035 addressing manufacturing processes and procedures is followed.
IRFR4620PBF Features
-
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
-
Avalanche SOA and fully characterized capacitance
-
Enhanced dV/dt and dI/dt capability of body diodes
-
Lead-Free
IRFR4620PBF Applications
-
Synchronous Rectification with High Efficiency in SMPS
-
Uninterruptible Power Supply (UPS) is a type of power supply that is
-
Power Switching at High Speed
-
Circuits with hard switches and high frequencies
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