IRFR4615TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Radiation Hardening :

No

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

144W Tc

Published :

2004

Turn-Off Delay Time :

25 ns

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 100µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

33A

Transistor Element Material :

SILICON

Number of Pins :

3

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Height :

2.52mm

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.042Ohm

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Rise Time :

35ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Length :

6.7056mm

Max Junction Temperature (Tj) :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

33A Tc

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Threshold Voltage :

5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

144W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Channels :

1

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Number of Terminations :

2

Width :

6.22mm

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

5 V