IRFR4615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

35ns

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Resistance :

42mOhm

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Dual Supply Voltage :

150V

FET Type :

N-Channel

Series :

HEXFET®

Continuous Drain Current (ID) :

33A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.22mm

Turn-Off Delay Time :

25 ns

Length :

6.7056mm

Drain to Source Breakdown Voltage :

150V

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 100µA

Number of Elements :

1

Radiation Hardening :

No

Number of Pins :

3

Termination :

SMD/SMT

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Height :

1.778mm

Published :

2004

Lead Free :

Lead Free

Power Dissipation :

144W

Fall Time (Typ) :

20 ns

Element Configuration :

Single

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

144W Tc

Threshold Voltage :

5V

Nominal Vgs :

5 V

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V