IRFR4510TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

143W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Mount :

Surface Mount

Fall Time (Typ) :

34 ns

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Series :

HEXFET®

Mounting Type :

Surface Mount

Terminal Position :

Single

Nominal Vgs :

3 V

Continuous Drain Current (ID) :

56A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation :

143W

Input Capacitance (Ciss) (Max) @ Vds :

3031pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 38A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

3V

Published :

2004

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

42 ns

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 100µA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

252A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Radiation Hardening :

No

Lead Free :

Lead Free

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V