IRFR430BTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation (Max) :

2.5W (Ta)

Avalanche Energy Rating (Eas) :

270 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1050 pF @ 25 V

Vgs (Max) :

±30V

Product Status :

Active

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

TO-252-3 (DPAK)

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

14 A

Pin Count :

3

Series :

-

Drain to Source Voltage (Vdss) :

500 V

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Package :

Bulk

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

3.5A (Tc)

Terminal Form :

Gull wing

FET Feature :

-

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C ~ 150°C (TJ)

JEDEC-95 Code :

TO-252

Number of Elements :

1

Terminal Position :

Single

Technology :

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs :

33 nC @ 10 V

Manufacturer :

Rochester Electronics LLC

Drain-source On Resistance-Max :

1.5 Ω

Case Connection :

DRAIN

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

2

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

500 V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.75A, 10V