IRFR430APBF
- Mfr.Part #
- IRFR430APBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A DPAK
- Stock
- 247,223
- In Stock :
- 247,223
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Threshold Voltage :
- 4.5V
- Gate to Source Voltage (Vgs) :
- 30V
- Min Operating Temperature :
- -55°C
- Height :
- 2.39mm
- Width :
- 6.22mm
- Turn On Delay Time :
- 8.7 ns
- Factory Lead Time :
- 11 Weeks
- Length :
- 6.73mm
- Power Dissipation :
- 110W
- Power Dissipation-Max :
- 110W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 490pF
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 27ns
- Published :
- 2007
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight :
- 1.437803g
- Number of Pins :
- 3
- Drain to Source Resistance :
- 1.7Ohm
- Continuous Drain Current (ID) :
- 5A
- REACH SVHC :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 1.7Ohm @ 3A, 10V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Element Configuration :
- Single
- Rds On Max :
- 1.7 Ω
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Number of Elements :
- 1
- Supplier Device Package :
- D-Pak
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 16 ns
- Datasheets
- IRFR430APBF
N-Channel Tube 1.7Ohm @ 3A, 10V ±30V 490pF @ 25V 24nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR430APBF Overview
A device's maximal input capacitance is 490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.7Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR430APBF Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 1.7Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRFR430APBF Applications
There are a lot of Vishay Siliconix
IRFR430APBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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