IRFR422

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Package :

Bulk

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

-

Drain to Source Voltage (Vdss) :

500 V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

50W (Tc)

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C ~ 150°C (TJ)

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.3A, 10V

Avalanche Energy Rating (Eas) :

210 mJ

Number of Terminals :

2

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-252, (D-Pak)

DS Breakdown Voltage-Min :

500 V

Series :

-

Pulsed Drain Current-Max (IDM) :

7 A

Drain-source On Resistance-Max :

4 Ω

Pbfree Code :

No

Manufacturer :

Rochester Electronics LLC

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Transistor Application :

SWITCHING