IRFR420ATRLPBF
- Mfr.Part #
- IRFR420ATRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.3A DPAK
- Stock
- 1,331
- In Stock :
- 1,331
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 3 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Continuous Drain Current (ID) :
- 3.3A
- Weight :
- 1.437803g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 3Ohm
- Fall Time (Typ) :
- 13 ns
- Number of Channels :
- 1
- Power Dissipation :
- 83W
- Length :
- 6.73mm
- Power Dissipation-Max :
- 83W Tc
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Input Capacitance :
- 340pF
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 16 ns
- Rise Time :
- 12ns
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- D-Pak
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 6.22mm
- Height :
- 2.39mm
- Turn On Delay Time :
- 8.1 ns
- Datasheets
- IRFR420ATRLPBF
N-Channel Tape & Reel (TR) 3Ohm @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR420ATRLPBF Overview
A device's maximum input capacitance is 340pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR420ATRLPBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRFR420ATRLPBF Applications
There are a lot of Vishay Siliconix
IRFR420ATRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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