IRFR420APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Resistance :

300mOhm

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Power Dissipation-Max :

83W Tc

Published :

2006

Pin Count :

3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

1

Power Dissipation :

83W

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Length :

6.73mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn-Off Delay Time :

16 ns

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

FET Type :

N-Channel

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4.5V

Rise Time :

12ns

Fall Time (Typ) :

13 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

8.1 ns

Element Configuration :

Single

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Continuous Drain Current (ID) :

3.3A

Height :

2.39mm

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Weight :

1.437803g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant