IRFR4105ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

24 ns

Rise Time :

40ns

Mount :

Surface Mount

Turn-Off Delay Time :

26 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Height :

1.778mm

Length :

6.7056mm

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

30A

Nominal Vgs :

4 V

Published :

2003

Number of Pins :

3

Power Dissipation-Max :

48W Tc

Resistance :

24.5MOhm

Factory Lead Time :

12 Weeks

Power Dissipation :

48W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

24.5m Ω @ 18A, 10V

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Dual Supply Voltage :

55V

Width :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Terminal Form :

Gull wing

Termination :

SMD/SMT

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current Rating :

30A

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

29 mJ

Number of Elements :

1

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

REACH SVHC :

No SVHC

Number of Terminations :

2

Voltage - Rated DC :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

29 ns