IRFR4105ZTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

24.5m Ω @ 18A, 10V

Power Dissipation-Max :

48W Tc

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Number of Terminations :

2

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

30A

Pulsed Drain Current-Max (IDM) :

120A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

29 mJ

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0245Ohm

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Published :

2003