IRFR4105ZTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Length :

6.7056mm

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

24.5m Ω @ 18A, 10V

Rise Time :

40ns

Dual Supply Voltage :

55V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Width :

6.22mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Series :

HEXFET®

Published :

2003

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Power Dissipation :

48W

JEDEC-95 Code :

TO-252AA

Height :

1.778mm

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Recovery Time :

29 ns

Voltage - Rated DC :

55V

Turn-Off Delay Time :

26 ns

Drain to Source Breakdown Voltage :

55V

Operating Mode :

ENHANCEMENT MODE

Resistance :

24.5MOhm

Terminal Form :

Gull wing

Current Rating :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

12 Weeks

Termination :

SMD/SMT

Continuous Drain Current (ID) :

30A

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Terminations :

2

Threshold Voltage :

4V

Fall Time (Typ) :

24 ns

Turn On Delay Time :

10 ns

Power Dissipation-Max :

48W Tc

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

29 mJ

FET Type :

N-Channel

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260