IRFR4105ZPBF
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- Mfr.Part #
- IRFR4105ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A DPAK
- Stock
- 3,388
- In Stock ：
- 3,388
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 24.5m Ω @ 18A, 10V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 55V
- Published :
- 2003
- Power Dissipation-Max :
- 48W Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Datasheets
- IRFR4105ZPBF
N-Channel Tube 24.5m Ω @ 18A, 10V ±20V 740pF @ 25V 27nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR4105ZPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175??C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRFR4105ZPBF Features
-
Advanced Process Technology
-
Ultra Low On-Resistance
-
175??C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
IRFR4105ZPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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