IRFR4105Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

30A

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

29 mJ

Drain-source On Resistance-Max :

0.0245Ohm

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

TIN LEAD

Packaging :

Tube

Power Dissipation-Max :

48W Tc

Pulsed Drain Current-Max (IDM) :

120A

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Published :

1998

Rds On (Max) @ Id, Vgs :

24.5m Ω @ 18A, 10V

Terminal Position :

Single

JESD-609 Code :

e0

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON