IRFR4105TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount, Through Hole

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

20A

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead, Lead Free

Dual Supply Voltage :

55V

Rise Time :

49ns

Power Dissipation-Max :

68W Tc

Radiation Hardening :

No

Threshold Voltage :

4V

Length :

6.7056mm

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

FET Type :

N-Channel

Voltage - Rated DC :

55V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Power Dissipation :

48W

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Current Rating :

25A

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Recovery Time :

86 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

27A

Termination :

SMD/SMT

Series :

HEXFET®

Turn-Off Delay Time :

31 ns

Turn On Delay Time :

7 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

45m Ω @ 16A, 10V

Transistor Element Material :

SILICON

Height :

2.3876mm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

2.38mm

Number of Terminations :

2

Vgs (Max) :

±20V

Published :

2005

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

27A Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

65 mJ

Fall Time (Typ) :

40 ns

Resistance :

45mOhm