IRFR4105TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

1998

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

45m Ω @ 16A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

27A Tc

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified

Number of Terminations :

2

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Rated DC :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Pins :

3

FET Type :

N-Channel

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

49ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

27A

Avalanche Energy Rating (Eas) :

65 mJ

Power Dissipation-Max :

68W Tc

Drain Current-Max (Abs) (ID) :

20A

Number of Elements :

1

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Current Rating :

25A

Power Dissipation :

68W

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.045Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA