IRFR4105TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

100A

Power Dissipation-Max :

68W Tc

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

65 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.045Ohm

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

45m Ω @ 16A, 10V

Series :

HEXFET®

Transistor Application :

SWITCHING

Published :

1998

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Vgs (Max) :

±20V