IRFR4104TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-252AA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

480A

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Drain-source On Resistance-Max :

0.0055Ohm

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Series :

HEXFET®

Number of Terminations :

2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

140W Tc

Avalanche Energy Rating (Eas) :

145 mJ

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Published :

2003

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

42A

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V