IRFR4104TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

40V

Power Dissipation-Max :

140W Tc

Turn-Off Delay Time :

37 ns

Lead Free :

Lead Free

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

480A

Radiation Hardening :

No

Height :

1.778mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

42A

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Rise Time :

69ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

36 ns

Gate to Source Voltage (Vgs) :

20V

Current Rating :

42A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Element Material :

SILICON

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Recovery Time :

42 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JESD-609 Code :

e3

Length :

6.7056mm

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation :

140W

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Series :

HEXFET®

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2003

Resistance :

5.5mOhm

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

Mount :

Surface Mount

Case Connection :

DRAIN

Threshold Voltage :

4V