IRFR4104TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

140W Tc

Pulsed Drain Current-Max (IDM) :

480A

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

42A

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0055Ohm

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-252AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2010

Avalanche Energy Rating (Eas) :

145 mJ

Current - Continuous Drain (Id) @ 25°C :

42A Tc

DS Breakdown Voltage-Min :

40V

Number of Terminations :

2

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING