IRFR4104PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Published :

2003

Vgs (Max) :

±20V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Drain Current-Max (Abs) (ID) :

42A

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

40V

Drain-source On Resistance-Max :

0.0055Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

140W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

480A

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

145 mJ

Transistor Element Material :

SILICON

Series :

HEXFET®

FET Type :

N-Channel

Transistor Application :

SWITCHING