IRFR4104PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Power Dissipation-Max :

140W Tc

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

480A

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

Drain Current-Max (Abs) (ID) :

42A

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Avalanche Energy Rating (Eas) :

145 mJ

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0055Ohm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Published :

2003

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Packaging :

Tube

Case Connection :

DRAIN

Terminal Form :

Gull wing

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE