IRFR3911TRPBF
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- Mfr.Part #
- IRFR3911TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14A DPAK
- Stock
- 718
- In Stock ：
- 718
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Rds On Max :
- 115 mΩ
- RoHS Status :
- RoHS Compliant
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 115mOhm @ 8.4A, 10V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 56W Tc
- Element Configuration :
- Single
- Input Capacitance :
- 740pF
- Supplier Device Package :
- D-Pak
- Fall Time (Typ) :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Rise Time :
- 26ns
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2004
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 14A
- Drain to Source Resistance :
- 115mOhm
- Turn-Off Delay Time :
- 52 ns
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 56W
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFR3911TRPBF
N-Channel Tape & Reel (TR) 115mOhm @ 8.4A, 10V ±20V 740pF @ 25V 32nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3911TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 740pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 52 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 115mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR3911TRPBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 115mOhm
a 100V drain to source voltage (Vdss)
IRFR3911TRPBF Applications
There are a lot of Infineon Technologies
IRFR3911TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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