IRFR3806TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

49 ns

Continuous Drain Current (ID) :

43mA

Number of Elements :

1

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

Nominal Vgs :

2 V

Turn On Delay Time :

6.3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 50μA

Radiation Hardening :

No

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

6.22mm

Fall Time (Typ) :

47 ns

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Power Dissipation :

71W

JEDEC-95 Code :

TO-252AA

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Published :

2005

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Rise Time :

40ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

71W Tc

Transistor Element Material :

SILICON

Length :

6.7056mm

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Resistance :

15.8mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

FET Type :

N-Channel

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

RoHS Status :

ROHS3 Compliant

Height :

2.3876mm

Packaging :

Tape and Reel (TR)