IRFR3806PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn On Delay Time :

6.3 ns

Height :

2.3876mm

REACH SVHC :

No SVHC

Length :

6.7056mm

Rise Time :

40ns

Current - Continuous Drain (Id) @ 25°C :

43A Tc

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

71W

Terminal Form :

Gull wing

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

43A

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

4V @ 50μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

71W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Width :

6.22mm

Number of Elements :

1

Mount :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel

Terminal Position :

Single

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

49 ns

Fall Time (Typ) :

47 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V

Number of Pins :

3

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Recovery Time :

33 ns

Series :

HEXFET®

Drain to Source Breakdown Voltage :

60V

Published :

2002

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2