IRFR3711ZTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

79W

Published :

2004

Voltage - Rated DC :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

93A

Current Rating :

93A

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

79W Tc

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Number of Terminations :

2

Height :

2.26mm

Case Connection :

DRAIN

Width :

6.22mm

Lead Free :

Contains Lead, Lead Free

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Rise Time :

13ns

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

5.2 ns

Number of Pins :

3

Length :

6.7056mm

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

5.7mOhm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

12 ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V