IRFR3711ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Published :

2004

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Series :

HEXFET®

Number of Terminations :

2

Lead Free :

Lead Free

Power Dissipation :

79W

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Recovery Time :

28 ns

Mount :

Surface Mount

JESD-609 Code :

e3

Nominal Vgs :

2 V

Rise Time :

13ns

JEDEC-95 Code :

TO-252AA

Length :

6.1976mm

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

20V

Radiation Hardening :

No

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Resistance :

5.7mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

RoHS Status :

RoHS Compliant

Turn On Delay Time :

12 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

93A

Current Rating :

93A

Fall Time (Typ) :

5.2 ns

Dual Supply Voltage :

20V

Height :

2.2606mm

FET Type :

N-Channel

Turn-Off Delay Time :

15 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 10V

Terminal Form :

Gull wing

Power Dissipation-Max :

79W Tc

Width :

6.22mm

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V