IRFR3711Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

140 mJ

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

30A

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

370A

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Published :

2004

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Series :

HEXFET®

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0057Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

JESD-609 Code :

e3

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

79W Tc