IRFR3711TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

460 mJ

Case Connection :

DRAIN

Power Dissipation :

120W

JESD-609 Code :

e3

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta 120W Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Length :

6.7056mm

Height :

2.3876mm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Published :

2005

Width :

6.22mm

Transistor Application :

SWITCHING

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

440A

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Fall Time (Typ) :

12 ns

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Series :

HEXFET®

Continuous Drain Current (ID) :

110A

Rise Time :

220ns

Turn On Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Number of Elements :

1

Turn-Off Delay Time :

17 ns

Resistance :

6.5mOhm

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

100A