IRFR3711TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0065ohm

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation :

120W

Number of Terminations :

2

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Rise Time :

220ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Voltage - Rated DC :

20V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.5W Ta 120W Tc

Drain to Source Breakdown Voltage :

20V

Height :

2.3876mm

Terminal Position :

Single

Published :

2004

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Length :

6.7056mm

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

460 mJ

JESD-609 Code :

e3

Current Rating :

110A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

12 ns

Lead Free :

Lead Free

Turn-Off Delay Time :

17 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

110A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

12 ns

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

440A

Terminal Form :

Gull wing

Number of Elements :

1

Width :

6.22mm

RoHS Status :

ROHS3 Compliant