IRFR3711TRL
- Mfr.Part #
- IRFR3711TRL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 100A DPAK
- Stock
- 5,388
- In Stock :
- 5,388
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-252AA
- Surface Mount :
- yes
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 15A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 2980pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drain-source On Resistance-Max :
- 0.0065ohm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 120W Tc
- Drain Current-Max (Abs) (ID) :
- 30A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Published :
- 2004
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 440A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFR3711TRL

N-Channel Tape & Reel (TR) 6.5m Ω @ 15A, 10V ±20V 2980pF @ 10V 44nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3711TRL Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 460 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2980pF @ 10V.30A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 440A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRFR3711TRL Features
the avalanche energy rating (Eas) is 460 mJ
based on its rated peak drain current 440A.
a 20V drain to source voltage (Vdss)
IRFR3711TRL Applications
There are a lot of Infineon Technologies
IRFR3711TRL applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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