IRFR3711PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Nominal Vgs :

3 V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rise Time :

220ns

Width :

6.22mm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Elements :

1

Length :

6.7056mm

FET Type :

N-Channel

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Number of Pins :

3

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

440A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Height :

2.3876mm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Avalanche Energy Rating (Eas) :

460 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

110A

Published :

2004

Voltage - Rated DC :

20V

Number of Terminations :

2

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.0065ohm

Terminal Position :

Single

Power Dissipation-Max :

2.5W Ta 120W Tc

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Current Rating :

110A

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Packaging :

Tube

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

120W