IRFR3710ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Turn On Delay Time :

14 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

53 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.7056mm

JESD-609 Code :

e3

Rise Time :

43ns

Power Dissipation :

140W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Height :

2.3876mm

Series :

HEXFET®

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

56A

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount

Terminal Form :

Gull wing

FET Type :

N-Channel

Published :

2006

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

220A

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

42A

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Number of Terminations :

2

Power Dissipation-Max :

140W Tc

Fall Time (Typ) :

42 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Radiation Hardening :

No