IRFR3710ZTRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Published :

2006

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Series :

HEXFET®

FET Type :

N-Channel

Surface Mount :

yes

Number of Elements :

1

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.018Ohm

Pulsed Drain Current-Max (IDM) :

220A

Drain Current-Max (Abs) (ID) :

42A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

140W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

100V

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

150 mJ

Time@Peak Reflow Temperature-Max (s) :

30