IRFR3710ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Power Dissipation-Max :

140W Tc

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.018Ohm

Published :

2006

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

42A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

150 mJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

220A

ECCN Code :

EAR99