IRFR3710ZTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.018Ohm

Power Dissipation-Max :

140W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

42A

Series :

HEXFET®

Number of Elements :

1

Rise Time :

43ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

220A

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Voltage - Rated DC :

100V

Mount :

Surface Mount

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Terminations :

2

JESD-609 Code :

e3

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

42A

Published :

2006

Avalanche Energy Rating (Eas) :

150 mJ