IRFR3708TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Contains Lead, Lead Free

Number of Channels :

1

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

30V

Rise Time :

50ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Series :

HEXFET®

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

244A

Turn-Off Delay Time :

17.6 ns

Max Junction Temperature (Tj) :

175°C

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Length :

6.7056mm

Continuous Drain Current (ID) :

61A

Number of Pins :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Turn On Delay Time :

7.2 ns

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Resistance :

12.5mOhm

Power Dissipation-Max :

87W Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Height :

2.52mm

Power Dissipation :

87W

Current Rating :

61A

Vgs(th) (Max) @ Id :

2V @ 250μA

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

12V

Nominal Vgs :

2 V

Dual Supply Voltage :

30V

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Fall Time (Typ) :

3.7 ns

JESD-30 Code :

R-PSSO-G2