IRFR3708TRLPBF
- Mfr.Part #
- IRFR3708TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A DPAK
- Stock
- 37,755
- In Stock :
- 37,755
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 244A
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Avalanche Energy Rating (Eas) :
- 213 mJ
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2417pF @ 15V
- Power Dissipation-Max :
- 87W Tc
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 30A
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Series :
- HEXFET®
- Vgs (Max) :
- ±12V
- DS Breakdown Voltage-Min :
- 30V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 15A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Drain to Source Voltage (Vdss) :
- 30V
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- IRFR3708TRLPBF

N-Channel Tape & Reel (TR) 12.5m Ω @ 15A, 10V ±12V 2417pF @ 15V 24nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 213 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2417pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 30A.There is a peak drain current of 244A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.8V 10V).
IRFR3708TRLPBF Features
the avalanche energy rating (Eas) is 213 mJ
based on its rated peak drain current 244A.
a 30V drain to source voltage (Vdss)
IRFR3708TRLPBF Applications
There are a lot of Infineon Technologies
IRFR3708TRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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