IRFR3708TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0125Ohm

JESD-609 Code :

e3

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Number of Terminations :

2

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

213 mJ

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Terminal Position :

Single

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Power Dissipation-Max :

87W Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

244A

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Drain Current-Max (Abs) (ID) :

30A

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2000

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99