IRFR3708PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Published :

2004

Terminal Position :

Single

Packaging :

Tube

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Power Dissipation-Max :

87W Tc

Pulsed Drain Current-Max (IDM) :

244A

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0125Ohm

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

30A

Series :

HEXFET®

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Surface Mount :

yes

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

213 mJ

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3