IRFR3708

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

61A Tc

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0125Ohm

Pulsed Drain Current-Max (IDM) :

244A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tube

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±12V

Series :

HEXFET®

Terminal Finish :

NOT SPECIFIED

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

213 mJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Published :

2000

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

87W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

RoHS Status :

Non-RoHS Compliant