IRFR3707ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

50W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Element Configuration :

Single

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

8 ns

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

56A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Published :

2008

Vgs (Max) :

±20V

Number of Elements :

1

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

220A

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

Length :

6.7056mm

Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

JESD-609 Code :

e3

Threshold Voltage :

1.8V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Width :

6.22mm

Series :

HEXFET®

FET Type :

N-Channel

Lead Free :

Contains Lead, Lead Free

Turn-Off Delay Time :

12 ns

Number of Pins :

3

ECCN Code :

EAR99

Height :

2.26mm

Resistance :

9.5MOhm

Nominal Vgs :

1.8 V

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Current Rating :

56A

Avalanche Energy Rating (Eas) :

42 mJ

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Fall Time (Typ) :

3.3 ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Rise Time :

11ns

Power Dissipation :

50W