IRFR3707ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Packaging :

Tube

Drain-source On Resistance-Max :

0.0095Ohm

DS Breakdown Voltage-Min :

30V

Terminal Finish :

MATTE TIN OVER NICKEL

Avalanche Energy Rating (Eas) :

42 mJ

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

56A Tc

JESD-609 Code :

e3

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

220A

Vgs (Max) :

±20V

Number of Terminations :

2

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Published :

2003

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Power Dissipation-Max :

50W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

30A

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

JESD-30 Code :

R-PSSO-G2