IRFR3707ZCTRLP

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Mfr.Part #
IRFR3707ZCTRLP
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 56A DPAK
Stock
9,230
In Stock :
9,230

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Time@Peak Reflow Temperature-Max (s) :
30
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Current - Continuous Drain (Id) @ 25°C :
56A Tc
Terminal Finish :
MATTE TIN OVER NICKEL
Rds On (Max) @ Id, Vgs :
9.5m Ω @ 15A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
30V
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
220A
Vgs(th) (Max) @ Id :
2.25V @ 25μA
Drain Current-Max (Abs) (ID) :
30A
Terminal Form :
Gull wing
Drain-source On Resistance-Max :
0.0095Ohm
Transistor Application :
SWITCHING
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
42 mJ
Peak Reflow Temperature (Cel) :
260
Series :
HEXFET®
Terminal Position :
Single
JEDEC-95 Code :
TO-252AA
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 4.5V
FET Type :
N-Channel
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Power Dissipation-Max :
50W Tc
DS Breakdown Voltage-Min :
30V
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 15V
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Published :
2008
RoHS Status :
RoHS Compliant
Datasheets
IRFR3707ZCTRLP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR3707ZCTRLP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IRFR3707ZCTRLP pinout, IRFR3707ZCTRLP datasheet PDF, IRFR3707ZCTRLP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR3707ZCTRLP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR3707ZCTRLP


N-Channel Tape & Reel (TR) 9.5m Ω @ 15A, 10V ±20V 1150pF @ 15V 14nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3707ZCTRLP Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 42 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1150pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRFR3707ZCTRLP Features


the avalanche energy rating (Eas) is 42 mJ
based on its rated peak drain current 220A.
a 30V drain to source voltage (Vdss)


IRFR3707ZCTRLP Applications


There are a lot of Infineon Technologies
IRFR3707ZCTRLP applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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