IRFR3707Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

TO-252AA

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

42 mJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.0095Ohm

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

220A

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

50W Tc

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V