IRFR3707TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.99nF

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

13mOhm @ 15A, 10V

Voltage - Rated DC :

30V

Power Dissipation :

87W

Published :

2004

Rds On Max :

13 mΩ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Turn On Delay Time :

8.5 ns

Fall Time (Typ) :

3.3 ns

Power Dissipation-Max :

87W Tc

Drain to Source Resistance :

17.5mOhm

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Continuous Drain Current (ID) :

61A

Number of Pins :

3

Current Rating :

61A

Max Operating Temperature :

175°C

Supplier Device Package :

D-Pak

Turn-Off Delay Time :

11.8 ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

13mOhm

Mount :

Surface Mount

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Rise Time :

78ns

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)